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 0.8μm 700v bcd g3s

 

 overview
        0.8μm 700v bcd g3s是公司的标准高压工艺平台之一,是以较经济的光刻层数实现700v高压工艺,特别合适离线式电源(ac/dc)和led 驱动产品设计,特征为0.8μm前端/0.5μm后端,单层多晶,双层金属,工艺平台提供常规及隔离的5v低压cmos、40v中压cmos器件、700v ldmos、700v hv 耗尽管、700v jfet器件,以及多晶高阻和齐纳二极管等器件。

 

 key features
- 0.8 micron front-end, 0.5 micron back-end design rule
- modular concept (hr/ zener / bjt / 700v jfet/ special require)
- 500v ldmos (bvds>550v)/ 650v ldmos (bvds>700v)/700v ldmos (bvds>750v) 
- jfet voff: -9v/-25v
- high value poly resistor; 1k or 3k

 

 applications
- off-line power (ac/dc)
- led driver
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 0.8μm 40v hv power analog

 

 overview
        0.8μm hv p/a是公司的新一代高压工艺平台,是以最少光刻层数实现的经济高压工艺,工艺特征为0.8μm feol/0.35umbeol 线宽,双层多晶,四层金属,应用于数模混合的高压产品。工艺平台提供常规及隔离的5v低压cmos、25v中压和40v高压cmos器件,以及多晶高阻和齐纳二极管等器件。

 

 key features
- 5v logic layout & performance compatible with the industry standard
- 0.8 micron front-end, 0.35 micron back-end design rule
- epi process for isolated devices
- modular concept (hr/ zener / bjt / special require)
- vgs/vds=5v/25 or vgs/vds=5v/40v,vgs/vds=25v/25 or vgs/vds=40v/40v hvcmos
- high value poly resistor
- i/o cell library with 2kv hbm esd protection levels

 

 applications
- lcd driver/led driver
- power management product
- battery protection ic

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